NanoArc® Cerium Oxide dispersions feature small particle sizes, tightly controlled particle size distributions and unique crystal morphology allowing new performance benchmarks to be realized in polishing applications.
NanoArc® Cerium Oxide dispersions are used in the planarization of silicon wafers and the polishing of photomask blanks, lithography optics, high energy laser lenses and rigid memory substrates.
Manufactured with a proprietary plasma process, our NanoArc® Cerium Oxide are discrete single crystals that are nonporous and near theoretical density, which means the particles do not change shape or density during a polishing operation. Additionally, the technology enables the surfaces to be engineered to have high zeta potentials when the particles are dispersed in water. This ensures that the particles can be efficiently dispersed down to individual primary crystallites and that the dispersion will remain stable because of the high degree of electrostatic repulsion created between particles.
Polishing Electronics with Nanophase particles provides reproducible removal rates, increased planarity, very low defectivity and improved surface roughness. Shown are typical surface morphology after polishing with NTC ceria in water (Sq = 0.116 nm): 